ERBIY BILAN LEGIRLANGAN KREMNIYNING FOTOPROVODIMLIK XUSUSIYATLARINI O‘RGANISH
Keywords:
Fotoprovodimlik, yorug‘lik o‘tkazuvchanligi, optik markaz, infraqizil diapazonAbstract
Erbiy bilan legirlangan kremniyning fotoprovodimlik xususiyatlari eksperimental ravishda o‘rganiladi. Legirlash natijasida Si panjarasida optik faol markazlar hosil bo‘lib, infraqizil diapazonda sezgirlik oshishi va zaryad tashuvchilarning yashash davri uzaytiriladi. Fotoprovodimlikning spektral va temperaturaviy bog‘liqligi tahlil qilinib, Kremniyni Er bilan legirlash natijasida fototashuvchilar oqimi va rekombinatsiya mexanizmlariga ta’siri kuzatiladi. Olingan natijalar Er bilan legirlangan kremniyning infraqizil detektorlar, fotodiodlar va optik kuchaytirgichlar uchun istiqbolli ekanligini ko‘rsatadi va materialning optik hamda elektr parametrlarini optimallashtirish imkoniyatlarini beradi.
Downloads
References
Celebrano, M., Ghirardini, L., Finazzi, M. va boshqalar. “Room Temperature Resonant Photocurrent in an Erbium Low Doped Silicon Transistor at Telecom Wavelength.” Nanomaterials, 2019. PMC
Timoshenko, V. Yu., Zhigunov, D. M., Kashkarov, P. K., Shalygina, O. A., va boshqalar. “Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix.” Journal of Non Crystalline Solids, 2006. cris.technion.ac.il
Shin, J. H., Seo, S. Y., Kim, S., Bishop, S. G. “Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide.” Applied Physics Letters, 2000. pure.korea.ac.kr
Omar, H., Sabri, N. K., Mohd Radzi, A. A. F. va boshqalar. “Optical Characterization of Porous Silicon (PS) Doped Erbium (Er) Using Photoluminescence Spectroscopy.” Advanced Materials Research, 2013. scientific.net
Bondarenko, V. P. “Er Doped Porous Silicon LED For Integrated Optoelectronics.” MRS Online Proceedings Library, Symposium: Materials & Devices for Silicon Based Optoelectronics, 1998.
