MORPHOLOGICAL ANALYSIS OF IMPURITY ATOM CLUSTERS IN SEMICONDUCTORS TO ENHANCE ENERGY EFFICIENCY

Abstract

This article examines the relationship between impurity atom clustering in semiconductors and the enhancement of energy efficiency in electronic materials. The study focuses on the morphological characterization of nickel impurity clusters in monocrystalline silicon obtained through diffusion doping at controlled temperatures. Various analytical methods, including scanning electron microscopy (SEM) and Hall effect measurements, were employed to determine the structural and electrophysical changes occurring in the doped material. The findings reveal that the diffusion temperature and time significantly influence cluster formation, morphology, and the resulting electrical conductivity. The research highlights that controlled clustering of impurity atoms can lead to improved carrier mobility and reduced energy dissipation, thereby enhancing the overall efficiency of semiconductor devices used in renewable energy systems.